product specification 600v n-channel mosfet 1N60 parameter symbol value unit drain-source voltage v d s s 600 v drain current - continuous i d 1.0 a drain current - pulsed i d m 4.0 a gate-source voltage v g s s 30 v power dissipation p d 30 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c description parameter symbol test conditions min. typ. max. unit drain-source breakdown voltage bv d s s v g s = 0v, i d =250 a 600 v zero gate voltage drain current i d s s v d s =600v, v g s =0v 10 ua gate-body leakage current, forward i g s s f v g s =30v, v d s =0v 100 na gate-body leakage current, reverse i g s s r v g s = -30v, v d s =0v -100 na gate threshold voltage v g s ( t h ) v d s = v g s , i d =250 a 3.0 5.0 v static drain-source on-resistance r d s ( o n ) v g s = 10 v, i d = 0.5 a 9.3 11.5 w drain-source diode forward voltage v s d v g s = 0 v, i s = 1.0 a 1.4 v these n-channel enhancement mode power field effect transistors are produced using fairchild s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o to-251 tiger electronic co.,ltd
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